Study of Grown-In Defects And Radiation-Induced Defects in Gaas And Alxga1-Xas
Study of Grown-In Defects And Radiation-Induced Defects in Gaas And Alxga1-Xas
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The main conclusions are listed as follows: (i) EL2a electron trap is observed in VPE GaAs layers and in LEC grown GaAs annealed at 500°C in H 2 ambient, (ii) EL2b electron trap was observed in unannealed LEC GaAs layers, and it's density can be reduced after thermal annealing, (iii) Ey+Q.QQeV hole trap has been observed in the LEC p-GaAs samples.
The physical origin of this hole trap is believed to be due to gallium antisite (Ga, ) defect, (iv) reducing the temperature cooling rate during crys...tal growth is beneficial for reducing the density of grown- in defects in the LPE GaAs layers. These experimental results are supported by the theoretical model of native point defects and EL2 electron trap in GaAs described in this work.
(5) For low energy proton (i.e., E = 50 to 290 keV) irradiated GaAs solar cells, six electron traps with energy of E c -0.14, E c -0.20, E c -0.31, E c -0.52, E c -0.60, and E c -0.71eV and seven hole traps with energy of E y +0.17, E v +0.27, E y +0.29, E y +0.44, E v +0.52, E v +0.57, and EL>0.71eV were observed.
What to read after Study of Grown-In Defects And Radiation-Induced Defects in Gaas And Alxga1-Xas?
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To quickly assess the difficulty of the text, read a short excerpt:
The main conclusions are listed as follows: (i) EL2a electron trap is observed in VPE GaAs layers and in LEC grown GaAs annealed at 500°C in H 2 ambient, (ii) EL2b electron trap was observed in unannealed LEC GaAs layers, and it's density can be reduced after thermal annealing, (iii) Ey+Q.QQeV hole trap has been observed in the LEC p-GaAs samples.
The physical origin of this hole trap is believed to be due to gallium antisite (Ga, ) defect, (iv) reducing the temperature cooling rate during crys...tal growth is beneficial for reducing the density of grown- in defects in the LPE GaAs layers. These experimental results are supported by the theoretical model of native point defects and EL2 electron trap in GaAs described in this work.
(5) For low energy proton (i.e., E = 50 to 290 keV) irradiated GaAs solar cells, six electron traps with energy of E c -0.14, E c -0.20, E c -0.31, E c -0.52, E c -0.60, and E c -0.71eV and seven hole traps with energy of E y +0.17, E v +0.27, E y +0.29, E y +0.44, E v +0.52, E v +0.57, and EL>0.71eV were observed.
What to read after Study of Grown-In Defects And Radiation-Induced Defects in Gaas And Alxga1-Xas?
You can find similar books in the "Read Also" column, or choose other free books by Wang, Weng-Lyang, 1950- to read onlineMoreLess
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